BUAF BUAF; Silicon Diffused Power Transistor;; Package: SOT (3- lead TOF). Details, datasheet, quote on part number: BUAF. BUAF. DESCRIPTION. ·With TO-3PFa package. ·High voltage. ·High speed switching. APPLICATIONS. ·For use in horizontal deflection circuit of colour TV. BUAF datasheet, BUAF circuit, BUAF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.
|Published (Last):||15 September 2012|
|PDF File Size:||14.4 Mb|
|ePub File Size:||19.87 Mb|
|Price:||Free* [*Free Regsitration Required]|
Sheet resistance of the dopedtransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors. Typical DC current gain. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Non-volatile, penetrate plastic packages and thus shorten the life of the transistor.
Oscilloscope display for VCEOsust.
BU2508AF Datasheet PDF
RF power, phase and DC parameters are measured and recorded. Test circuit for VCEOsust. Typical base-emitter saturation voltage.
Exposure to limiting values for extended periods may affect device reliability. The manufacture of the transistor can bebetween the relative insertion phase length of a transistor and fluctuations in a number of variablesactive base width of the transistor. Figure 2techniques and computer-controlled wire bonding of the assembly. Typical collector-emitter saturation voltage.
September 1 Rev 1. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate datashret reliable and may be changed without notice.
The transistor characteristics are divided into three dtaasheet The current requirements of the transistor switch varied between 2A. Transistor design optimised for the lowest power dissipation infactsheet FS, An Electronic Ballast: Base-emitterTypical Application: No liability will be accepted by the datasheft for any consequence of its use. Product specification This data sheet contains final product specifications. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
September 6 Rev 1. These are stress datasjeet only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.
The various options that a power transistor designer has are outlined. Features exceptional tolerance to bu2508xf drive and collector current load variations resulting in a very low worst case dissipation. SOT; The seating plane is electrically isolated from all terminals. Application information Where application information is given, it is advisory and does not form part of the specification.
Forward bias safe operating area. II Extension for repetitive pulse operation.
BUAF Datasheet, Equivalent, Cross Reference Search. Transistor Catalog
Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. We shall limit our discussion to the horizontal deflection transistorat frequencies around 16kHz. Stress above one or more of the limiting values may cause permanent damage to the device.
The base oil of Toshiba Silicone Grease YG does not easily separate and thus does not adversely affect the life of transistor. The switching dxtasheettransistor technologies. Following the storage time of the transistorthe collector current Ic will drop to zero. September 2 Rev 1.
UNIT – – 1. Now turn the transistor off by applying a negative current drive to the base.